Vishay Siliconix SI2333CDS-T1-E3

SI2333CDS-T1-E3 Vishay Siliconix
SI2333CDS-T1-E3
Vishay Siliconix

Product Information

Detailed Description:
P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
SI2333
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 4.5V
Rds On (Max) @ Id, Vgs:
35mOhm @ 5.1A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1225pF @ 6V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
7.1A (Tc)
Customer Reference:
Power Dissipation (Max):
1.25W (Ta), 2.5W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI2333CDS-T1-E3. It features p-channel 12v 7.1a (tc) 1.25w (ta), 2.5w (tc) surface mount sot-23-3 (to-236). The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: si2333. The maximum gate charge and given voltages include 25nc @ 4.5v. It has a maximum Rds On and voltage of 35mohm @ 5.1a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The vishay siliconix's product offers user-desired applications. The product has a 12v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 1225pf @ 6v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. sot-23-3 (to-236) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 7.1a (tc). The product carries maximum power dissipation 1.25w (ta), 2.5w (tc). This product use mosfet (metal oxide) technology.

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Si2333CDS(Datasheets)

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