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The TPH3206PS is an advanced N-Channel power MOSFET rated for 600V and 17A at case temperature. It is developed for high-performance applications, leveraging Transphorm's expertise in efficient and reliable power-switching components.
The Transphorm TPH3206PS is a refined GaN FET, illustrating the ultimate edge of power transistor technology. This creation is a bright example of Transphorm's dedication to driving innovation in the field of power electronics.
The TPH3206PS is an N-channel GaN FET with a high breakdown voltage of 600V and a continuous drain current of 17A. Packaged in the TO220AB format, this device is built to deliver high power output and outstanding switching performance in a compact package.
The GaN technology employed in the TPH3206PS enables superior performance compared to traditional silicon-based devices. It offers significantly faster switching speeds, lower losses, and higher efficiency, making it ideal for high-performance power applications.
Constructed with Transphorm's high-quality GaN technology, the TPH3206PS offers outstanding durability and reliability. It is designed to withstand harsh operational conditions and maintain stable performance over time, providing an extended lifespan for your power electronic devices.
The TPH3206PS is excellent for various applications due to its high efficiency and high-power handling capabilities. It can be encountered in power supplies, motor drives, and renewable energy systems, among additional high-performance power electronic applications.
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