Toshiba Semiconductor and Storage TK4P55DA(T6RSS-Q)

TK4P55DA-T6RSS-Q- Toshiba Semiconductor and Storage TK4P55DA(T6RSS-Q)
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
2.45Ohm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
9 nC @ 10 V
Vgs(th) (Max) @ Id:
4.4V @ 1mA
edacadModel:
TK4P55DA(T6RSS-Q) Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2768873
Drain to Source Voltage (Vdss):
550 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
380 pF @ 25 V
Mounting Type:
Surface Mount
Series:
π-MOSVII
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Power Dissipation (Max):
80W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK4P55
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK4P55DA(T6RSS-Q). It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 2.45ohm @ 1.8a, 10v. The maximum gate charge and given voltages include 9 nc @ 10 v. The typical Vgs (th) (max) of the product is 4.4v @ 1ma. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 550 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 380 pf @ 25 v. The product is available in surface mount configuration. The product π-mosvii, is a highly preferred choice for users. dpak is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 3.5a (ta). The product carries maximum power dissipation 80w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk4p55, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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