Typical Gate Charge @ Vgs:
28 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
160 W
Maximum Gate Source Voltage:
±30 V
Maximum Gate Threshold Voltage:
5V
Height:
4.37mm
Width:
9.35mm
Length:
10.4mm
Maximum Drain Source Resistance:
350 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
12 A
Minimum Gate Threshold Voltage:
3V
Forward Diode Voltage:
1.5V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
350mOhm @ 6A, 10V
title:
STB12NM50T4
Vgs(th) (Max) @ Id:
5V @ 50µA
REACH Status:
REACH Unaffected
edacadModel:
STB12NM50T4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1039295
Drain to Source Voltage (Vdss):
550 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
160W (Tc)
standardLeadTime:
13 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1000 pF @ 25 V
Mounting Type:
Surface Mount
Series:
MDmesh™
Gate Charge (Qg) (Max) @ Vgs:
39 nC @ 10 V
Supplier Device Package:
D2PAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB12N
ECCN:
EAR99
