Toshiba Semiconductor and Storage TK39J60W5,S1VQ

TK39J60W5-S1VQ Toshiba Semiconductor and Storage TK39J60W5,S1VQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Rds On (Max) @ Id, Vgs:
65mOhm @ 19.4A, 10V
title:
TK39J60W5,S1VQ
Vgs(th) (Max) @ Id:
3.7V @ 1.9mA
edacadModel:
TK39J60W5,S1VQ Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/3821020
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
270W (Tc)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
4100 pF @ 300 V
Mounting Type:
Through Hole
Series:
DTMOSIV
Gate Charge (Qg) (Max) @ Vgs:
135 nC @ 10 V
Supplier Device Package:
TO-3P(N)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
38.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK39J60
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK39J60W5,S1VQ. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. It has a maximum Rds On and voltage of 65mohm @ 19.4a, 10v. The typical Vgs (th) (max) of the product is 3.7v @ 1.9ma. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 270w (tc). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 4100 pf @ 300 v. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. The maximum gate charge and given voltages include 135 nc @ 10 v. to-3p(n) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 38.8a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk39j60, a base product number of the product. The product is designated with the ear99 code number.

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search TK39J60W5,S1VQ on website for other similar products.
We accept all major payment methods for all products including ET11696020. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with TK39J60W5,S1VQ directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK39J60W5,S1VQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK39J60W5,S1VQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11696020 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11696020.
Yes. We ship TK39J60W5,S1VQ Internationally to many countries around the world.