Category:
Power MOSFET
Dimensions:
10.4 x 4.6 x 10.75mm
Maximum Continuous Drain Current:
8.4 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
620 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
I2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
42 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1250 pF @ 50 V
Length:
10.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
41 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
MDmesh K3, SuperMESH3
Maximum Gate Source Voltage:
±30 V
Height:
10.75mm
Typical Turn-On Delay Time:
14.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
750 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Rds On (Max) @ Id, Vgs:
750mOhm @ 4A, 10V
title:
STI10N62K3
Vgs(th) (Max) @ Id:
4.5V @ 100µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
620 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1250 pF @ 50 V
Mounting Type:
Through Hole
Series:
SuperMESH3™
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 10 V
Supplier Device Package:
I2PAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
8.4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STI10N
ECCN:
EAR99
