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This is manufactured by Vishay Siliconix. The manufacturer part number is SIHG33N65EF-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 109mohm @ 16.5a, 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 313w (tc). It has a long 20 weeks standard lead time. The product's input capacitance at maximum includes 4026 pf @ 100 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 171 nc @ 10 v. to-247ac is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 31.6a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sihg33, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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