Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Width:
14mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1000 V
Maximum Gate Threshold Voltage:
6.5V
Package Type:
TO-268
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
90 nC @ 10 V
Channel Type:
N
Length:
16.05mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
830 W
Series:
HiperFET, Q3-Class
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
5.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
660 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
6.5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Rds On (Max) @ Id, Vgs:
660mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs:
90 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
830W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4890 pF @ 25 V
standardLeadTime:
98 Weeks
Mounting Type:
Surface Mount
Series:
HiPerFET™, Q3 Class
Supplier Device Package:
TO-268AA
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFT18
ECCN:
EAR99
