Toshiba Semiconductor and Storage SSM3J120TU,LF

Enrgtech Part No: ET11487506
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Manufacturer Part No:
SSM3J120TU,LF
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Manufacturer: Toshiba Semiconductor and Storage

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Product Information

FET Feature:

HTSUS:

8541.21.0095

RoHS Status:

RoHS Compliant

Operating Temperature:

150°C (TJ)

Package / Case:

3-SMD, Flat Leads

Rds On (Max) @ Id, Vgs:

38mOhm @ 3A, 4V

title:

SSM3J120TU,LF

Vgs(th) (Max) @ Id:

1V @ 1mA

edacadModel:

SSM3J120TU,LF Models

FET Type:

P-Channel

Drive Voltage (Max Rds On, Min Rds On):

1.5V, 4V

edacadModelUrl:

/en/models/2257756

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J120TU,LF. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-smd, flat leads. It has a maximum Rds On and voltage of 38mohm @ 3a, 4v. The typical Vgs (th) (max) of the product is 1v @ 1ma. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 500mw (ta). The product's input capacitance at maximum includes 1484 pf @ 10 v. The product is available in surface mount configuration. The product u-mosiv, is a highly preferred choice for users. The maximum gate charge and given voltages include 22.3 nc @ 4 v. ufm is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 4a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3j120, a base product number of the product. The product is designated with the ear99 code number.

Mosfets Prod Guide(Datasheets)

Marking Chg 08/Feb/2016(PCN Packaging)

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