Maximum Continuous Drain Current:
110 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3.3V
Package Type:
VSONP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
37 nC @ 10 V
Channel Type:
N
Length:
6.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
125 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7.8 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
6.4mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 10 V
Vgs(th) (Max) @ Id:
3.3V @ 250µA
REACH Status:
REACH Affected
edacadModel:
CSD19531Q5AT Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/4840661
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.3W (Ta), 125W (Tc)
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3870 pF @ 50 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSONP (5x6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD19531
ECCN:
EAR99
