Maximum Continuous Drain Current:
1.2 A
Transistor Material:
Si
Width:
2.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.5 nC @ 10 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
27 W
Series:
MDmesh K3, SuperMESH3
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
6.2mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Rds On (Max) @ Id, Vgs:
8Ohm @ 600mA, 10V
edacadModel:
STU1HN60K3 Models
Gate Charge (Qg) (Max) @ Vgs:
9.5 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4156712
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
27W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
140 pF @ 50 V
Mounting Type:
Through Hole
Series:
SuperMESH3™
Supplier Device Package:
TO-251 (IPAK)
Current - Continuous Drain (Id) @ 25°C:
1.2A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STU1HN60
ECCN:
EAR99
