Maximum Continuous Drain Current:
600 mA
Transistor Material:
Si
Width:
3.94mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
450 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6 nC @ 10 V
Channel Type:
N
Length:
4.95mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
2.5 W
Series:
MDmesh K3, SuperMESH3
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.95mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.8 Ω
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Rds On (Max) @ Id, Vgs:
3.8Ohm @ 500mA, 10V
title:
STQ3N45K3-AP
Vgs(th) (Max) @ Id:
4.5V @ 50µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
450 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
150 pF @ 25 V
Mounting Type:
Through Hole
Series:
SuperMESH3™
Gate Charge (Qg) (Max) @ Vgs:
6 nC @ 10 V
Supplier Device Package:
TO-92-3
Packaging:
Tape & Box (TB)
Current - Continuous Drain (Id) @ 25°C:
600mA (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STQ3
ECCN:
EAR99
