Toshiba Semiconductor and Storage TK39N60X,S1F

TK39N60X-S1F Toshiba Semiconductor and Storage TK39N60X,S1F
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 1.9mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
65mOhm @ 12.5A, 10V
edacadModel:
TK39N60X,S1F Models
Gate Charge (Qg) (Max) @ Vgs:
85 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4815227
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
270W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4100 pF @ 300 V
standardLeadTime:
24 Weeks
Mounting Type:
Through Hole
Series:
DTMOSIV-H
Supplier Device Package:
TO-247
Current - Continuous Drain (Id) @ 25°C:
38.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK39N60
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK39N60X,S1F. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 1.9ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 65mohm @ 12.5a, 10v. The maximum gate charge and given voltages include 85 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 270w (tc). The product's input capacitance at maximum includes 4100 pf @ 300 v. It has a long 24 weeks standard lead time. The product is available in through hole configuration. The product dtmosiv-h, is a highly preferred choice for users. to-247 is the supplier device package value. The continuous current drain at 25°C is 38.8a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk39n60, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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