STMicroelectronics STB11NM60FDT4

Enrgtech Part No: ET11268048
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Manufacturer Part No:
STB11NM60FDT4
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Manufacturer: STMicroelectronics

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Product Information

FET Feature:

HTSUS:

8541.29.0095

RoHS Status:

ROHS3 Compliant

Operating Temperature:

Package / Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs:

450mOhm @ 5.5A, 10V

title:

STB11NM60FDT4

Vgs(th) (Max) @ Id:

5V @ 250µA

REACH Status:

REACH Unaffected

FET Type:

N-Channel

Drive Voltage (Max Rds On, Min Rds On):

10V

Drain to Source Voltage (Vdss):

600 V

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This is manufactured by STMicroelectronics. The manufacturer part number is STB11NM60FDT4. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 450mohm @ 5.5a, 10v. The typical Vgs (th) (max) of the product is 5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 160w (tc). The product's input capacitance at maximum includes 900 pf @ 25 v. The product is available in surface mount configuration. The product fdmesh™, is a highly preferred choice for users. The maximum gate charge and given voltages include 40 nc @ 10 v. d2pak is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 11a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stb11, a base product number of the product. The product is designated with the ear99 code number.

IPG-PWR/14/8422 11/Apr/2014(PCN Design/Specification)

D2PAK Lead Modification 04/Oct/2013(PCN Design/Specification)

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