IXYS IXTP75N10P

IXTP75N10P IXYS
IXTP75N10P
IXTP75N10P
IXYS

Product Information

Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
74 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
360 W
Series:
HiperFET, Polar
Maximum Gate Source Voltage:
-20 V, +20 V
Channel Type:
N
Maximum Gate Threshold Voltage:
5.5V
Maximum Drain Source Resistance:
25 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
75 A
Transistor Material:
Si
Height:
9.15mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
25mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
74 nC @ 10 V
Vgs(th) (Max) @ Id:
5.5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
360W (Tc)
standardLeadTime:
44 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2250 pF @ 25 V
Mounting Type:
Through Hole
Series:
Polar
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTP75
ECCN:
EAR99
RoHs Compliant
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This is manufactured by IXYS. The manufacturer part number is IXTP75N10P. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 74 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 360 w maximum power dissipation. The product hiperfet, polar, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product is available in [Cannel Type] channel. The product carries 5.5v of maximum gate threshold voltage. It provides up to 25 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 75 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 9.15mm. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 25mohm @ 500ma, 10v. The maximum gate charge and given voltages include 74 nc @ 10 v. The typical Vgs (th) (max) of the product is 5.5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 360w (tc). It has a long 44 weeks standard lead time. The product's input capacitance at maximum includes 2250 pf @ 25 v. The product polar, is a highly preferred choice for users. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixtp75, a base product number of the product. The product is designated with the ear99 code number.

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ESD Control Selection Guide V1(Technical Reference)
pdf icon
IXTP 75N10P PolarHT Power MOSFET Data Sheet(Technical Reference)
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IXT(A,P,Q)75N10P(Datasheets)

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FAQs

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You can order IXYS brand products with IXTP75N10P directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
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Yes. We ship IXTP75N10P Internationally to many countries around the world.