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Toshiba Semiconductor and Storage SSM6J207FE,LF

Toshiba Semiconductor and Storage

Product Information

Base Part Number:
SSM6J207
Detailed Description:
P-Channel 30V 1.4A (Ta) 500mW (Ta) Surface Mount ES6
Input Capacitance (Ciss) (Max) @ Vds:
137pF @ 15V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Series:
U-MOSII
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
251mOhm @ 650mA, 10V
Supplier Device Package:
ES6
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SOT-563, SOT-666
Power Dissipation (Max):
500mW (Ta)
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
1.4A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6J207FE,LF. Base Part Number: ssm6j207. It features p-channel 30v 1.4a (ta) 500mw (ta) surface mount es6. The product's input capacitance at maximum includes 137pf @ 15v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.6v @ 1ma. The product u-mosii, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. It has a maximum Rds On and voltage of 251mohm @ 650ma, 10v. es6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in sot-563, sot-666. The product carries maximum power dissipation 500mw (ta). The product has a 30v drain to source voltage. The continuous current drain at 25°C is 1.4a (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.

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Mosfets Prod Guide(Datasheets)

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