Toshiba Semiconductor and Storage 2SK4017(Q)

Enrgtech Part No: ET11079625
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Manufacturer Part No:
2SK4017(Q)
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Manufacturer: Toshiba Semiconductor and Storage

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Product Information

FET Feature:

HTSUS:

8541.29.0095

RoHS Status:

RoHS Compliant

Operating Temperature:

150°C (TJ)

Package / Case:

TO-251-3 Stub Leads, IPAK

Rds On (Max) @ Id, Vgs:

100mOhm @ 2.5A, 10V

title:

2SK4017(Q)

Vgs(th) (Max) @ Id:

2.5V @ 1mA

edacadModel:

2SK4017(Q) Models

FET Type:

N-Channel

Drive Voltage (Max Rds On, Min Rds On):

4V, 10V

edacadModelUrl:

/en/models/2062726

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SK4017(Q). It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 stub leads, ipak. It has a maximum Rds On and voltage of 100mohm @ 2.5a, 10v. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 20w (tc). The product's input capacitance at maximum includes 730 pf @ 10 v. The product is available in through hole configuration. The product u-mosiii, is a highly preferred choice for users. The maximum gate charge and given voltages include 15 nc @ 10 v. pw-mold2 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to 2sk4017, a base product number of the product. The product is designated with the ear99 code number.

Mosfets Prod Guide(Datasheets)

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