Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
9.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
38 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
125 W
Series:
STripFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.6mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
75 mΩ
Manufacturer Standard Lead Time:
14 Weeks
Detailed Description:
N-Channel 200V 30A (Tc) 125W (Tc) Surface Mount D2PAK
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
STB30
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Rds On (Max) @ Id, Vgs:
75mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1597pF @ 25V
Mounting Type:
Surface Mount
Series:
STripFET™
Supplier Device Package:
D2PAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Customer Reference:
Power Dissipation (Max):
125W (Tc)
Technology:
MOSFET (Metal Oxide)
