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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM5G10TU(TE85L,F). The FET features of the product include schottky diode (isolated). It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-smd (5 leads), flat leads. It has a maximum Rds On and voltage of 213mohm @ 1a, 4v. The maximum gate charge and given voltages include 6.4 nc @ 4 v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 500mw (ta). The product's input capacitance at maximum includes 250 pf @ 10 v. The product is available in surface mount configuration. The product u-mosiii, is a highly preferred choice for users. ufv is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 1.5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm5g10, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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