Toshiba Semiconductor and Storage TPN4R203NC,L1Q

Enrgtech Part No: ET11030525
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Manufacturer Part No:
TPN4R203NC,L1Q
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Manufacturer: Toshiba Semiconductor and Storage

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Product Information

FET Feature:

HTSUS:

8541.29.0095

RoHS Status:

RoHS Compliant

Operating Temperature:

150°C (TJ)

Package / Case:

8-PowerVDFN

Rds On (Max) @ Id, Vgs:

4.2mOhm @ 11.5A, 10V

title:

TPN4R203NC,L1Q

Vgs(th) (Max) @ Id:

2.3V @ 200µA

edacadModel:

TPN4R203NC,L1Q Models

FET Type:

N-Channel

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

edacadModelUrl:

/en/models/3945679

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPN4R203NC,L1Q. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 4.2mohm @ 11.5a, 10v. The typical Vgs (th) (max) of the product is 2.3v @ 200µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 700mw (ta), 22w (tc). It has a long 12 weeks standard lead time. The product's input capacitance at maximum includes 1370 pf @ 15 v. The product is available in surface mount configuration. The product u-mosviii, is a highly preferred choice for users. The maximum gate charge and given voltages include 24 nc @ 10 v. 8-tson advance (3.1x3.1) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 23a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpn4r203, a base product number of the product. The product is designated with the ear99 code number.

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