Category:
Power MOSFET
Dimensions:
6.6 x 2.4 x 6.9mm
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
2.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
4.9 mΩ
Package Type:
TO-251
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
40 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4040 pF @ 25 V
Length:
6.6mm
Pin Count:
3
Typical Turn-Off Delay Time:
75 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
110 W
Series:
DeepGate, STripFET
Maximum Gate Source Voltage:
±20 V
Height:
6.9mm
Typical Turn-On Delay Time:
17 ns
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Rds On (Max) @ Id, Vgs:
3.3mOhm @ 40A, 10V
edacadModel:
STU150N3LLH6 Models
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/2122483
Package:
Tube
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4040 pF @ 25 V
Mounting Type:
Through Hole
Series:
DeepGATE™, STripFET™ VI
Supplier Device Package:
TO-251 (IPAK)
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STU150
ECCN:
EAR99
