Toshiba Semiconductor and Storage SSM3K37FS,LF

SSM3K37FS-LF Toshiba Semiconductor and Storage SSM3K37FS,LF
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 20V 200mA (Ta) 100mW (Ta) Surface Mount SSM
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C (TA)
Package / Case:
SC-75, SOT-416
Base Part Number:
SSM3K37
Rds On (Max) @ Id, Vgs:
2.2Ohm @ 100mA, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
12pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSIII
Supplier Device Package:
SSM
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
200mA (Ta)
Customer Reference:
Power Dissipation (Max):
100mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K37FS,LF. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 20v 200ma (ta) 100mw (ta) surface mount ssm. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c (ta) operating temperature range. Moreover, the product comes in sc-75, sot-416. Base Part Number: ssm3k37. It has a maximum Rds On and voltage of 2.2ohm @ 100ma, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±10v. The product's input capacitance at maximum includes 12pf @ 10v. The product is available in surface mount configuration. The product u-mosiii, is a highly preferred choice for users. ssm is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 200ma (ta). The product carries maximum power dissipation 100mw (ta). This product use mosfet (metal oxide) technology.

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