Toshiba Semiconductor and Storage TPN2R304PL,L1Q

TPN2R304PL-L1Q Toshiba Semiconductor and Storage TPN2R304PL,L1Q
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
24 Weeks
Detailed Description:
N-Channel 40V 80A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id:
2.4V @ 0.3mA
Operating Temperature:
175°C
Package / Case:
8-PowerVDFN
Base Part Number:
TPN2R304
Gate Charge (Qg) (Max) @ Vgs:
41nC @ 10V
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 40A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3600pF @ 20V
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
8-TSON Advance (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Customer Reference:
Power Dissipation (Max):
630mW (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPN2R304PL,L1Q. It has typical 24 weeks of manufacturer standard lead time. It features n-channel 40v 80a (tc) 630mw (ta), 104w (tc) surface mount 8-tson advance (3.3x3.3). The typical Vgs (th) (max) of the product is 2.4v @ 0.3ma. The product has 175°c operating temperature range. Moreover, the product comes in 8-powervdfn. Base Part Number: tpn2r304. The maximum gate charge and given voltages include 41nc @ 10v. It has a maximum Rds On and voltage of 2.3mohm @ 40a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 3600pf @ 20v. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. 8-tson advance (3.3x3.3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 80a (tc). The product carries maximum power dissipation 630mw (ta), 104w (tc). This product use mosfet (metal oxide) technology.

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