Toshiba Semiconductor and Storage SSM3J321T(TE85L,F)

Enrgtech Part No: ET10932672
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Manufacturer Part No:
SSM3J321T(TE85L,F)
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Manufacturer: Toshiba Semiconductor and Storage

SSM3J321T-TE85L-F- Toshiba Semiconductor and Storage SSM3J321T(TE85L,F)

Product Information

FET Feature:

HTSUS:

8541.21.0095

Vgs(th) (Max) @ Id:

1V @ 1mA

Operating Temperature:

150°C (TJ)

Package / Case:

TO-236-3, SC-59, SOT-23-3

Rds On (Max) @ Id, Vgs:

46mOhm @ 3A, 4.5V

title:

SSM3J321T(TE85L,F)

FET Type:

P-Channel

Drive Voltage (Max Rds On, Min Rds On):

1.5V, 4.5V

Drain to Source Voltage (Vdss):

20 V

Vgs (Max):

±8V

Moisture Sensitivity Level (MSL):

1 (Unlimited)

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J321T(TE85L,F). It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 46mohm @ 3a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 700mw (ta). The product's input capacitance at maximum includes 640 pf @ 10 v. The product is available in surface mount configuration. The product u-mosv, is a highly preferred choice for users. The maximum gate charge and given voltages include 8.1 nc @ 4.5 v. tsm is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 5.2a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3j321, a base product number of the product. The product is designated with the ear99 code number.

Mosfets Prod Guide(Datasheets)

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