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This is manufactured by Vishay Siliconix. The manufacturer part number is SUP85N10-10-GE3. It has typical 18 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 10.5 mohm @ 30a, 10v. It features n-channel 100v 85a (tc) 3.75w (ta), 250w (tc) through hole. The product's input capacitance at maximum includes 6550pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product trenchfet®, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 160nc @ 10v. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 3.75w (ta), 250w (tc). The product has a 100v drain to source voltage. The continuous current drain at 25°C is 85a (tc). This product use mosfet (metal oxide) technology. The vishay siliconix's product offers user-desired applications.
For more information please check the datasheets.
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