Category:
Power MOSFET
Dimensions:
6.6 x 2.4 x 6.2mm
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
2.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
400 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11.7 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
305 pF@ 25 V
Length:
6.6mm
Pin Count:
3
Typical Turn-Off Delay Time:
22.5 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
45 W
Series:
MDmesh, SuperMESH
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
6.2mm
Typical Turn-On Delay Time:
9.2 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.8 Ω
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Rds On (Max) @ Id, Vgs:
1.8Ohm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Vgs(th) (Max) @ Id:
4.5V @ 50µA
REACH Status:
REACH Unaffected
edacadModel:
STD5NK40Z-1 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2035579
Drain to Source Voltage (Vdss):
400 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
45W (Tc)
standardLeadTime:
13 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
305 pF @ 25 V
Mounting Type:
Through Hole
Series:
SuperMESH™
Supplier Device Package:
TO-251 (IPAK)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD5NK40
ECCN:
EAR99
