Category:
Power MOSFET
Dimensions:
1.5 x 1 x 0.38mm
Maximum Continuous Drain Current:
3.5 A
Transistor Material:
Si
Width:
1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Maximum Gate Threshold Voltage:
1.2V
Package Type:
DSBGA
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.9 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
550 pF @ 6 V
Length:
1.5mm
Pin Count:
6
Typical Turn-Off Delay Time:
14.7 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.65 W
Series:
NexFET
Maximum Gate Source Voltage:
±8 V
Height:
0.38mm
Typical Turn-On Delay Time:
4.6 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
23 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFBGA, DSBGA
Rds On (Max) @ Id, Vgs:
20mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
4.7 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1.2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD13303W1015 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
edacadModelUrl:
/en/models/4311519
Drain to Source Voltage (Vdss):
12 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.65W (Ta)
Qualification:
-
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
715 pF @ 6 V
Mounting Type:
Surface Mount
Grade:
-
Series:
NexFET™
Supplier Device Package:
6-DSBGA (1x1.5)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
3.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD13303
ECCN:
EAR99
