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United Kingdom
This is manufactured by Infineon Technologies. The manufacturer part number is IPB35N10S3L26ATMA1. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 26.3mohm @ 35a, 10v. The maximum gate charge and given voltages include 39 nc @ 10 v. The typical Vgs (th) (max) of the product is 2.4v @ 39µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 71w (tc). It has a long 12 weeks standard lead time. The product's input capacitance at maximum includes 2700 pf @ 25 v. The product is available in surface mount configuration. The product is automotive, a grade of class. The product optimos™, is a highly preferred choice for users. pg-to263-3 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 35a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ipb35n10, a base product number of the product. The product is designated with the ear99 code number.
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