Category:
Power MOSFET
Dimensions:
38.23 x 25.07 x 9.6mm
Maximum Continuous Drain Current:
37 A
Width:
25.07mm
Maximum Drain Source Voltage:
1000 V
Maximum Gate Threshold Voltage:
6.5V
Package Type:
SOT-227B
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
305 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1060 pF @ 25 V
Length:
38.23mm
Pin Count:
4
Forward Transconductance:
35S
Typical Turn-Off Delay Time:
90 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
890 W
Series:
Polar HiPerFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.6mm
Typical Turn-On Delay Time:
60 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
220 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs:
220mOhm @ 22A, 10V
title:
IXFN44N100P
Vgs(th) (Max) @ Id:
6.5V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
890W (Tc)
standardLeadTime:
55 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
19000 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Polar
Gate Charge (Qg) (Max) @ Vgs:
305 nC @ 10 V
Supplier Device Package:
SOT-227B
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
37A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN44
ECCN:
EAR99
