Category:
Power MOSFET
Dimensions:
25.25 x 23.25 x 5.7mm
Maximum Continuous Drain Current:
63 A
Transistor Material:
Si
Width:
23.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Maximum Gate Threshold Voltage:
5V
Package Type:
SMPD
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
267 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
18600 pF@ 25 V
Length:
25.25mm
Pin Count:
24
Forward Transconductance:
110S
Typical Turn-Off Delay Time:
90 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
520 W
Series:
HiperFET, Polar3
Maximum Gate Source Voltage:
±40 V
Height:
5.7mm
Typical Turn-On Delay Time:
42 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
43 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
24-PowerSMD, 21 Leads
Rds On (Max) @ Id, Vgs:
43mOhm @ 66A, 10V
Gate Charge (Qg) (Max) @ Vgs:
250 nC @ 10 V
Vgs(th) (Max) @ Id:
5V @ 8mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
520W (Tc)
standardLeadTime:
44 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
18600 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HiPerFET™, Polar3™
Supplier Device Package:
24-SMPD
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
63A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MMIX1F132
ECCN:
EAR99
