Vishay General Semiconductor - Diodes Division VS-80EBU02HN4

VS-80EBU02HN4 Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division

Product Information

HTSUS:
8541.10.0080
Package / Case:
PowerTab®
Operating Temperature - Junction:
-55°C ~ 175°C
title:
VS-80EBU02HN4
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
40 ns
Current - Average Rectified (Io):
80A
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 80 A
Voltage - DC Reverse (Vr) (Max):
200 V
Capacitance @ Vr, F:
-
Qualification:
-
Current - Reverse Leakage @ Vr:
50 µA @ 200 V
Mounting Type:
Through Hole
Grade:
-
Series:
-
Supplier Device Package:
PowerTab®
Packaging:
Tube
Technology:
Standard
ECCN:
EAR99
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This is manufactured by Vishay General Semiconductor - Diodes Division. The manufacturer part number is VS-80EBU02HN4. It is assigned with possible HTSUS value of 8541.10.0080. Moreover, the product comes in powertab®. The product operate at temperatures ranging from -55°c ~ 175°c. It has a robust speed of fast recovery =< 500ns, > 200ma (io). It has a trr (reverse recovery time) of 40 ns. It features a 80a of average rectified current. The product has a maximum forward voltage of 1.1 v @ 80 a. While it has maximum reverse voltage of 200 v. 50 µa @ 200 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. powertab® is the supplier device package value. In addition, tube is the available packaging type of the product. This product use standard technology. The product is designated with the ear99 code number.

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VS-80EBU02HN4(Datasheets)

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