Toshiba Semiconductor and Storage TRS12E65F,S1Q

TRS12E65F-S1Q Toshiba Semiconductor and Storage TRS12E65F,S1Q
Toshiba Semiconductor and Storage

Product Information

HTSUS:
8541.10.0080
RoHS Status:
RoHS Compliant
Package / Case:
TO-220-2
Reverse Recovery Time (trr):
0 ns
Operating Temperature - Junction:
175°C (Max)
Speed:
No Recovery Time > 500mA (Io)
edacadModel:
TRS12E65F,S1Q Models
edacadModelUrl:
/en/models/9953905
Current - Average Rectified (Io):
12A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max):
650 V
Capacitance @ Vr, F:
65pF @ 650V, 1MHz
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
24 Weeks
Current - Reverse Leakage @ Vr:
90 µA @ 650 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-2L
Packaging:
Tube
Technology:
SiC (Silicon Carbide) Schottky
Base Product Number:
TRS12E65
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS12E65F,S1Q. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs compliant. Moreover, the product comes in to-220-2. It has a trr (reverse recovery time) of 0 ns. The product operate at temperatures ranging from 175°c (max). It has a robust speed of no recovery time > 500ma (io). It features a 12a of average rectified current. The product has a maximum forward voltage of 1.7 v @ 12 a. While it has maximum reverse voltage of 650 v. Moreover, the product has a 65pf @ 650v, 1mhz capacitance. Its typical moisture sensitivity level is 1 (unlimited). It has a long 24 weeks standard lead time. 90 µa @ 650 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. to-220-2l is the supplier device package value. In addition, tube is the available packaging type of the product. This product use sic (silicon carbide) schottky technology. Moreover, it corresponds to trs12e65, a base product number of the product. The product is designated with the ear99 code number.

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