Toshiba Semiconductor and Storage TTA006B,Q

Enrgtech Part No: ET23592585
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Manufacturer Part No:
TTA006B,Q
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Manufacturer: Toshiba Semiconductor and Storage

TTA006B-Q Toshiba Semiconductor and Storage TTA006B,Q

Product Information

Current - Collector (Ic) (Max):

1 A

HTSUS:

8541.29.0095

Operating Temperature:

150°C (TJ)

Package / Case:

TO-225AA, TO-126-3

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 100mA, 5V

Frequency - Transition:

70MHz

title:

TTA006B,Q

Voltage - Collector Emitter Breakdown (Max):

230 V

Transistor Type:

PNP

Vce Saturation (Max) @ Ib, Ic:

1.5V @ 50mA, 500mA

Moisture Sensitivity Level (MSL):

1 (Unlimited)

standardLeadTime:

12 Weeks

Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TTA006B,Q. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-225aa, to-126-3. Furthermore, 100 @ 100ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 70mhz. The maximum collector emitter breakdown voltage of the product is 230 v. The transistor is a pnp type. The 1.5v @ 50ma, 500ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. In addition, 200na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-126n is the supplier device package value. In addition, tray is the available packaging type of the product. The maximum power of the product is 1.5 w. The product is designated with the ear99 code number.

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