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This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS5130QAZ. The maximum collector current includes 1 a. The product is rohs non-compliant. The maximum collector emitter breakdown voltage of the product is 30 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-xdfn exposed pad. Furthermore, 250 @ 100ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 170mhz. It is shipped in bulk package . In addition, it is vendor undefined. The transistor is a pnp type. The 240mv @ 100ma, 1a is the maximum Vce saturation. In addition, 100na is the maximum current at collector cutoff. The product is available in surface mount configuration. dfn1010d-3 is the supplier device package value. The maximum power of the product is 325 mw.
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