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This is manufactured by NXP USA Inc.. The manufacturer part number is PBHV8515QA147. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is not applicable. The maximum collector emitter breakdown voltage of the product is 150 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-xdfn exposed pad. Furthermore, 100 @ 200ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 75mhz. The 200mv @ 100ma, 500ma is the maximum Vce saturation. In addition, it is vendor undefined. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na is the maximum current at collector cutoff. The product is available in surface mount configuration. dfn1010d-3 is the supplier device package value. The maximum power of the product is 325 mw. The product is designated with the ear99 code number.
For more information please check the datasheets.
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