NXP Semiconductors PHN203,518

PHN203-518 NXP Semiconductors PHN203,518
NXP Semiconductors

Product Information

FET Feature:
Logic Level Gate
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
14.6nC @ 10V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
30mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C:
6.3A (Ta)
Configuration:
2 N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Input Capacitance (Ciss) (Max) @ Vds:
560pF @ 20V
Qualification:
-
Mounting Type:
Surface Mount
Grade:
-
Series:
-
Supplier Device Package:
8-SO
Power - Max:
2W (Ta)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by NXP Semiconductors. The manufacturer part number is PHN203,518. The FET features of the product include logic level gate. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum gate charge and given voltages include 14.6nc @ 10v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 30mohm @ 7a, 10v. The continuous current drain at 25°C is 6.3a (ta). The product is available in 2 n-channel configuration. It is shipped in bulk package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is vendor undefined. The product's input capacitance at maximum includes 560pf @ 20v. The product is available in surface mount configuration. 8-so is the supplier device package value. The maximum power of the product is 2w (ta). This product use mosfet (metal oxide) technology.

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Yes. We ship PHN203,518 Internationally to many countries around the world.