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This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS4130QAZ. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.29.0075. The maximum collector emitter breakdown voltage of the product is 30 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-xdfn exposed pad. Furthermore, 180 @ 1a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 190mhz. The 245mv @ 50ma, 1a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. dfn1010d-3 is the supplier device package value. The maximum power of the product is 325 mw. The product is designated with the ear99 code number.
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