Toshiba Semiconductor and Storage 2SA1987-O(Q)

2SA1987-O-Q- Toshiba Semiconductor and Storage 2SA1987-O(Q)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
15 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3PL
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 1A, 5V
Frequency - Transition:
30MHz
Voltage - Collector Emitter Breakdown (Max):
230 V
edacadModel:
2SA1987-O(Q) Models
edacadModelUrl:
/en/models/2062557
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
3V @ 800mA, 8A
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
15 Weeks
Current - Collector Cutoff (Max):
5µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(L)
Packaging:
Bulk
Power - Max:
180 W
Base Product Number:
2SA1987
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1987-O(Q). The maximum collector current includes 15 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3pl. Furthermore, 80 @ 1a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. The maximum collector emitter breakdown voltage of the product is 230 v. The transistor is a pnp type. The 3v @ 800ma, 8a is the maximum Vce saturation. Its typical moisture sensitivity level is not applicable. It has a long 15 weeks standard lead time. In addition, 5µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-3p(l) is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 180 w. Moreover, it corresponds to 2sa1987, a base product number of the product. The product is designated with the ear99 code number.

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