Toshiba Semiconductor and Storage TTC1949-GR,LF

TTC1949-GR-LF Toshiba Semiconductor and Storage TTC1949-GR,LF
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
500 mA
HTSUS:
8541.21.0075
RoHS Status:
RoHS non-compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 100mA, 1V
Frequency - Transition:
100MHz
title:
TTC1949-GR,LF
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
400mV @ 50mA, 500mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
40 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
S-Mini
Packaging:
Tape & Reel (TR)
Power - Max:
200 mW
Base Product Number:
TTC1949
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TTC1949-GR,LF. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs non-compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 180 @ 100ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a npn type. The 400mv @ 50ma, 500ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 40 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 200 mw. Moreover, it corresponds to ttc1949, a base product number of the product. The product is designated with the ear99 code number.

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