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This is manufactured by NXP USA Inc.. The manufacturer part number is 2PB709AS,115. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 45 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 290 @ 2ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. In addition, it is reach unaffected. The transistor is a pnp type. The 500mv @ 10ma, 100ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 10na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. smt3; mpak is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 250 mw. Moreover, it corresponds to 2pb70, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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