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This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N3960. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs non-compliant. The maximum collector emitter breakdown voltage of the product is 12 v. The product has -65°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-206aa, to-18-3 metal can. Furthermore, 60 @ 10ma, 1v is the minimum DC current gain at given voltage. In addition, it is reach unaffected. The transistor is a npn type. The 300mv @ 3ma, 30ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 10µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. The product is military, a grade of class. to-18 (to-206aa) is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 400 mw. Moreover, it corresponds to 2n3960, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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