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This is manufactured by Microsemi Corporation. The manufacturer part number is 2N3251AUB. The maximum collector current includes 200ma. It features bipolar (bjt) transistor pnp 60v 200ma 360mw surface mount ub. Furthermore, 100 @ 10ma, 1v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in surface mount configuration. The 500mv @ 5ma, 50ma is the maximum Vce saturation. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. ub is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 360mw. Moreover, the product comes in 3-smd, no lead. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
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