Toshiba Semiconductor and Storage 2SD2406-Y(F)

2SD2406-Y-F- Toshiba Semiconductor and Storage 2SD2406-Y(F)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
4 A
HTSUS:
8541.29.0095
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 500mA, 5V
Frequency - Transition:
8MHz
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max):
80 V
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
30µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220NIS
Power - Max:
25 W
Base Product Number:
2SD2406
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SD2406-Y(F). The maximum collector current includes 4 a. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Furthermore, 120 @ 500ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 8mhz. The 1.5v @ 300ma, 3a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 80 v. The transistor is a npn type. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 30µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-220nis is the supplier device package value. The maximum power of the product is 25 w. Moreover, it corresponds to 2sd2406, a base product number of the product. The product is designated with the ear99 code number.

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2SD2406(Datasheets)

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