Toshiba Semiconductor and Storage 2SD1407A-Y(F)

Enrgtech Part No: ET14927933
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Manufacturer Part No:
2SD1407A-Y(F)
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Manufacturer: Toshiba Semiconductor and Storage

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Product Information

Current - Collector (Ic) (Max):

5 A

HTSUS:

8541.29.0095

Operating Temperature:

150°C (TJ)

Package / Case:

TO-220-3 Full Pack

DC Current Gain (hFE) (Min) @ Ic, Vce:

120 @ 1A, 5V

Frequency - Transition:

12MHz

title:

2SD1407A-Y(F)

Voltage - Collector Emitter Breakdown (Max):

100 V

edacadModel:

2SD1407A-Y(F) Models

edacadModelUrl:

/en/models/1986092

Transistor Type:

NPN

Vce Saturation (Max) @ Ib, Ic:

2V @ 400mA, 4A

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SD1407A-Y(F). The maximum collector current includes 5 a. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Furthermore, 120 @ 1a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 12mhz. The maximum collector emitter breakdown voltage of the product is 100 v. The transistor is a npn type. The 2v @ 400ma, 4a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-220nis is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 30 w. Moreover, it corresponds to 2sd1407, a base product number of the product. The product is designated with the ear99 code number.

2SD1407A(Datasheets)

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