Toshiba Semiconductor and Storage 2SC6042,T2HOSH1Q(J

2SC6042-T2HOSH1Q-J Toshiba Semiconductor and Storage 2SC6042,T2HOSH1Q(J
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
1 A
HTSUS:
8541.29.0095
Operating Temperature:
150°C (TJ)
Package / Case:
SC-71
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 5V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
1V @ 100mA, 800mA
Voltage - Collector Emitter Breakdown (Max):
375 V
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
MSTM
Power - Max:
1 W
Base Product Number:
2SC6042
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC6042,T2HOSH1Q(J. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sc-71. Furthermore, 100 @ 100ma, 5v is the minimum DC current gain at given voltage. The 1v @ 100ma, 800ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 375 v. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. mstm is the supplier device package value. The maximum power of the product is 1 w. Moreover, it corresponds to 2sc6042, a base product number of the product. The product is designated with the ear99 code number.

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2SC6042(Datasheets)

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