Toshiba Semiconductor and Storage 2SC2859-GR(TE85L,F

Enrgtech Part No: ET14927867
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Manufacturer Part No:
2SC2859-GR(TE85L,F
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Manufacturer: Toshiba Semiconductor and Storage

2SC2859-GR-TE85L-F Toshiba Semiconductor and Storage 2SC2859-GR(TE85L,F

Product Information

Current - Collector (Ic) (Max):

500 mA

HTSUS:

8541.21.0075

Operating Temperature:

125°C (TJ)

Package / Case:

TO-236-3, SC-59, SOT-23-3

DC Current Gain (hFE) (Min) @ Ic, Vce:

200 @ 100mA, 1V

Frequency - Transition:

300MHz

title:

2SC2859-GR(TE85L,F

Voltage - Collector Emitter Breakdown (Max):

30 V

Transistor Type:

NPN

Vce Saturation (Max) @ Ib, Ic:

250mV @ 10mA, 100mA

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Current - Collector Cutoff (Max):

100nA (ICBO)

Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC2859-GR(TE85L,F. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product has 125°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 200 @ 100ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 300mhz. The maximum collector emitter breakdown voltage of the product is 30 v. The transistor is a npn type. The 250mv @ 10ma, 100ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 150 mw. Moreover, it corresponds to 2sc2859, a base product number of the product. The product is designated with the ear99 code number.

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