Toshiba Semiconductor and Storage 2SB1481(TOJS,Q,M)

Enrgtech Part No: ET14927788
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Manufacturer Part No:
2SB1481(TOJS,Q,M)
|
Manufacturer: Toshiba Semiconductor and Storage

2SB1481-TOJS-Q-M- Toshiba Semiconductor and Storage 2SB1481(TOJS,Q,M)

Product Information

Current - Collector (Ic) (Max):

4 A

HTSUS:

8541.29.0095

Operating Temperature:

150°C (TJ)

Package / Case:

TO-220-3 Full Pack

DC Current Gain (hFE) (Min) @ Ic, Vce:

2000 @ 3A, 2V

Frequency - Transition:

Vce Saturation (Max) @ Ib, Ic:

1.5V @ 6mA, 3A

Voltage - Collector Emitter Breakdown (Max):

100 V

Transistor Type:

PNP

Package:

Bulk

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Current - Collector Cutoff (Max):

2µA (ICBO)

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SB1481(TOJS,Q,M). The maximum collector current includes 4 a. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Furthermore, 2000 @ 3a, 2v is the minimum DC current gain at given voltage. The 1.5v @ 6ma, 3a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 100 v. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 2µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-220nis is the supplier device package value. The maximum power of the product is 2 w. Moreover, it corresponds to 2sb1481, a base product number of the product. The product is designated with the ear99 code number.

2SB1481(Datasheets)

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Toshiba Semiconductor and Storage 2SB1481(TOJS,Q,M)

2SB1481(TOJS,Q,M)

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