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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1680(T6DNSO,F,M. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.21.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 120 @ 100ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 500mv @ 50ma, 1a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92mod is the supplier device package value. The maximum power of the product is 900 mw. Moreover, it corresponds to 2sa1680, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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