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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1162S-GR,LF(D. The maximum collector current includes 150 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product has 125°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 70 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. The 300mv @ 10ma, 100ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. The maximum power of the product is 150 mw. Moreover, it corresponds to 2sa1162, a base product number of the product. The product is designated with the ear99 code number.
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