Toshiba Semiconductor and Storage 2SA1020-Y,F(J

2SA1020-Y-F-J Toshiba Semiconductor and Storage 2SA1020-Y,F(J
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.21.0075
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 Long Body
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 500mA, 2V
Frequency - Transition:
100MHz
title:
2SA1020-Y,F(J
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 1A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92MOD
Packaging:
Bulk
Power - Max:
900 mW
Base Product Number:
2SA1020
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1020-Y,F(J. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.21.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 70 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp type. The 500mv @ 50ma, 1a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92mod is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 900 mw. Moreover, it corresponds to 2sa1020, a base product number of the product. The product is designated with the ear99 code number.

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2SA1020(Datasheets)

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